
Infineon Technologies AG has launched the CoolGaN™ Bidirectional Switch (BDS) 650 V G5, a state-of-the-art gallium nitride (GaN) power switch designed to handle bidirectional current and voltage with active blocking capabilities. This innovative device leverages a common-drain topology and dual-gate structure, integrating Infineon’s advanced Gate Injection Transistor (GIT) technology to deliver a monolithic, bidirectional switch based on the company's proven CoolGaN platform. It serves as a high-efficiency alternative to conventional back-to-back switch configurations often used in power converters.
The CoolGaN BDS offers numerous benefits for modern power conversion architectures. By combining two switches into a single device, it streamlines bidirectional converter topologies, enabling single-stage power conversion and eliminating the need for multiple conversion stages. This not only enhances efficiency and reliability but also allows for more compact and cost-effective system designs. Mini inverter applications further benefit from increased power density and reduced component count, simplifying manufacturing and lowering overall costs. Additionally, the BDS enables advanced grid functionalities such as reactive power compensation and bidirectional energy flow.
This breakthrough component opens new possibilities across a wide range of applications:

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