Nexperia reaches cooperation with German automotive parts supplier

Recently, Nexperia announced a strategic partnership with German automotive supplier KOSTAL, aimed at producing wide-bandgap (WBG) devices that meet the stringent requirements of automotive applications.

Under the terms of the collaboration, Nexperia will develop, manufacture, and supply wide-bandgap power electronic devices designed and validated by KOSTAL. The initial phase of the partnership will focus on the development of top-side-cooled (TSC) QDPAK-packaged silicon carbide (SiC) MOSFETs, specifically tailored for electric vehicles (EVs) and onboard chargers (OBCs).

Notably, Nexperia, a subsidiary of Wingtech Technology, offers a range of products that include silicon carbide diodes and MOSFETs, gallium nitride (GaN) E-mode and D-mode devices, alongside a well-established portfolio of silicon-based products.

It is worth mentioning that, beyond this collaboration, Nexperia has already expanded its footprint in Germany. In June of this year, the company announced plans to invest $200 million (approximately 1.4 billion RMB) to develop wide-bandgap semiconductors like silicon carbide and gallium nitride, and to establish production infrastructure at its Hamburg facility.

Source: Nexperia

To meet the rising long-term demand for efficient power semiconductors, Nexperia began developing and producing SiC, GaN, and Si devices in Germany as of June this year. In the same month, Nexperia’s first production lines for high-voltage GaN D-mode transistors and silicon carbide diodes commenced operation. Nexperia noted that the next milestone will be the establishment of a high-efficiency and cost-effective 8-inch production line for silicon carbide MOSFETs and low-voltage GaN HEMTs. These production lines are expected to be fully operational at the Hamburg facility within the next two years.