TI Unveils Space-Grade GaN FET Gate Drivers to Enhance Satellite Power Efficiency

Texas Instruments (TI) recently introduced a new series of radiation-hardened and radiation-tolerant half-bridge GaN FET gate drivers. This series includes the first space-grade GaN FET driver capable of operating at up to 200V. The devices are available in both ceramic and plastic packaging options, ensuring compatibility with various design needs and supporting three different voltage levels. With these advancements, TI enables engineers to build satellite power systems using a single chip supplier, simplifying the design and procurement process.

 

As satellite systems become more sophisticated to meet the growing demands for enhanced on-orbit processing, data transmission, high-resolution imaging, and precision sensing, power efficiency becomes a key focus. TI’s new gate drivers are engineered to drive GaN FETs with rapid rise and fall times, improving the efficiency of power supplies. This design improvement allows satellites to optimize the use of power generated by their solar panels, supporting mission-critical functions more effectively.

 

“Satellites play an essential role in tasks such as providing global internet access, monitoring climate conditions, and tracking shipping activity, helping humans gain better insight and navigate our world,” said Javier Valle, Product Line Manager for Space Power Products at TI. “Our new portfolio ensures satellites in low, medium, and geosynchronous Earth orbits can operate efficiently in the harsh space environment over extended periods, all while maintaining high power efficiency.”