Infineon Expands CoolSiC™ MOSFET 400 V G2 Portfolio with New Packaging Options and Higher Voltage Ratings

Infineon Technologies AG has broadened its CoolSiC™ MOSFET 400 V G2 portfolio with the introduction of new top-side cooled (TSC) TOLT packages, as well as TO-247-3 and TO-247-4 versions. In addition, the company unveiled three new devices in TOLL packages with voltage ratings of 440 V (continuous) and 455 V (transient). These latest CoolSiC MOSFETs deliver enhanced thermal performance, higher system efficiency, and improved power density. They are engineered to meet the demands of high-power, compute-intensive applications, including AI server power supplies, solar inverters, uninterruptible power supplies (UPS), Class D audio amplifiers, motor drives, and solid-state circuit breakers. For these mission-critical systems, the devices offer the reliability and performance required for long-term operation.

Compared with existing 250 V and 300 V silicon technologies, the CoolSiC G2 400 V and 440 V MOSFETs reduce conduction losses by up to 50% at 120°C, thanks to a flatter RDS(on) versus junction temperature (Tj) profile. They also feature a significantly improved figure of merit for switching, with reverse recovery charge reduced by at least a factor of five.

At the system level, these advancements translate into measurable efficiency gains. In a three-level flying capacitor continuous conduction mode (CCM) totem-pole PFC, the CoolSiC G2 400 V and 440 V devices achieve up to a 0.4 percentage point increase in peak PSU efficiency compared with state-of-the-art interleaved two-level CCM totem-pole PFCs. This corresponds to an approximately 15% reduction in system losses at peak efficiency.